JPH0464470B2 - - Google Patents

Info

Publication number
JPH0464470B2
JPH0464470B2 JP60284689A JP28468985A JPH0464470B2 JP H0464470 B2 JPH0464470 B2 JP H0464470B2 JP 60284689 A JP60284689 A JP 60284689A JP 28468985 A JP28468985 A JP 28468985A JP H0464470 B2 JPH0464470 B2 JP H0464470B2
Authority
JP
Japan
Prior art keywords
film
capacitive element
forming
oxide film
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60284689A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62142342A (ja
Inventor
Takashi Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60284689A priority Critical patent/JPS62142342A/ja
Publication of JPS62142342A publication Critical patent/JPS62142342A/ja
Publication of JPH0464470B2 publication Critical patent/JPH0464470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60284689A 1985-12-17 1985-12-17 半導体装置の製造方法 Granted JPS62142342A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60284689A JPS62142342A (ja) 1985-12-17 1985-12-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60284689A JPS62142342A (ja) 1985-12-17 1985-12-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62142342A JPS62142342A (ja) 1987-06-25
JPH0464470B2 true JPH0464470B2 (en]) 1992-10-15

Family

ID=17681701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60284689A Granted JPS62142342A (ja) 1985-12-17 1985-12-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62142342A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2668528B2 (ja) * 1987-01-16 1997-10-27 ローム 株式会社 半導体装置の製造方法
JP2623692B2 (ja) * 1988-01-22 1997-06-25 ソニー株式会社 半導体回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018948A (ja) * 1983-07-12 1985-01-31 Nec Corp 半導体集積回路装置
JPS6066850A (ja) * 1983-09-22 1985-04-17 Sony Corp Ｍｉｓ容量素子

Also Published As

Publication number Publication date
JPS62142342A (ja) 1987-06-25

Similar Documents

Publication Publication Date Title
JPH0465548B2 (en])
KR920004226B1 (ko) 반도체장치의 제조방법
JPH051623B2 (en])
JPH0728040B2 (ja) 半導体装置およびその製造方法
JPH0316791B2 (en])
JP2965283B2 (ja) 薄膜トランジスタの製造方法
JPH06163578A (ja) 接続孔形成法
JPH0464470B2 (en])
JPS5923544A (ja) 半導体装置の製造方法
KR910001191B1 (ko) 반도체장치의 제조방법
JPS5940571A (ja) 半導体装置
JPS6220711B2 (en])
JP2797451B2 (ja) 半導体装置の製造方法
JPH01260857A (ja) 半導体素子およびその製造方法
JPH01251669A (ja) 電界効果トランジスタの製造方法
JP2654175B2 (ja) 半導体装置の製造方法
JP2718756B2 (ja) 半導体集積回路及びその製造方法
KR100266002B1 (ko) 반도체장치의 제조방법
JPH01298758A (ja) 半導体装置の製造方法
JP2630616B2 (ja) 半導体装置の製造方法
JPS62206873A (ja) 半導体装置の製造方法
JPH01189950A (ja) 半導体容量素子の製造方法
JPS60105268A (ja) 半導体装置及びその製造方法
JPH02125471A (ja) 半導体素子の製造方法
JPS61147575A (ja) 半導体装置の製造方法